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PD - 95097A
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free
l
IRFR3706PBF IRFU3706PbF
HEXFET(R) Power MOSFET
VDSS
20V
RDS(on) max
9.0m
ID
75A
Benefits
l l l
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3706
I-Pak IRFU3706
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 12 75 53 280 88 44 0.59 -55 to + 175
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
--- --- ---
Max.
1.7 50 110
Units
C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
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12/14/04
IRFR/U3706PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.021 6.9 8.1 11.5 --- --- --- --- --- Max. Units --- V --- V/C 9.0 11 m 23 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, I D = 1mA VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS = 2.8V, ID = 7.5A VDS = VGS, ID = 250A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 23 8.0 5.5 16 1.8 6.8 87 17 4.8 2410 1070 140 Max. Units Conditions --- S VDS = 16V, ID = 57A 35 ID = 28A 12 nC VDS = 10V 8.3 VGS = 4.5V 24 VGS = 0V, VDS = 10V --- --- VDD = 10V ns --- ID = 28A --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 10V --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
220 28
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.88 0.82 45 65 49 78 75 A 280 1.3 --- 68 98 74 120 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 36A, VGS = 0V TJ = 125C, I S = 36A, VGS = 0V TJ = 25C, I F = 36A, VR=20V di/dt = 100A/s TJ = 125C, IF = 36A, VR=20V di/dt = 100A/s
2
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IRFR/U3706PbF
1000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
100
2.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
2.5V
10 0.1
10 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 71A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 175 C
100
1.5
1.0
0.5
10 2.5
V DS = 15V 20s PULSE WIDTH 3.5 4.5 5.5 6.5
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U3706PbF
100000
10
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 28A VDS = 16V VDS = 10V
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
4
100
Crss
2
10 1 10 100
0 0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
TJ = 175 C
10
I D , Drain Current (A)
100
100 100us
1ms 10 10ms
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U3706PbF
80
LIMITED BY PACKAGE
V DS VGS
RD
ID , Drain Current (A)
60
RG 4.5V
D.U.T.
+
-VDD
40
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U3706PbF
15V
EAS , Single Pulse Avalanche Energy (mJ)
500
TOP
400
VDS
L
DRIVER
BOTTOM
ID 12A 24A 28A
RG
20V
D.U.T
IAS tp
+ V - DD
300
A
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
100
V(BR)DSS tp
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
I AS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
4.5 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U3706PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFR/U3706PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 12 916A 34
ASS EMBLY LOT CODE
DATE CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INTERNATIONAL RECTIFIER LOGO
IRFU120 12 34
DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY S IT E CODE
AS S EMBLY LOT CODE
8
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IRFR/U3706PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRFU120 WIT H ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-F ree" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRFU120 919A 56 78
ASSEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRF U120 56 78
ASS EMBLY LOT CODE
DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY SIT E CODE
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IRFR/U3706PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Starting TJ = 25C, L = 0.54mH
RG = 25, IAS = 28A.
R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
10
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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